SE300472B - - Google Patents

Info

Publication number
SE300472B
SE300472B SE4119/65A SE411965A SE300472B SE 300472 B SE300472 B SE 300472B SE 4119/65 A SE4119/65 A SE 4119/65A SE 411965 A SE411965 A SE 411965A SE 300472 B SE300472 B SE 300472B
Authority
SE
Sweden
Application number
SE4119/65A
Inventor
B Vedin
O Edqvist
P Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE4119/65A priority Critical patent/SE300472B/xx
Publication of SE300472B publication Critical patent/SE300472B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
SE4119/65A 1965-03-31 1965-03-31 SE300472B (en])

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE4119/65A SE300472B (en]) 1965-03-31 1965-03-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE4119/65A SE300472B (en]) 1965-03-31 1965-03-31

Publications (1)

Publication Number Publication Date
SE300472B true SE300472B (en]) 1968-04-29

Family

ID=20263573

Family Applications (1)

Application Number Title Priority Date Filing Date
SE4119/65A SE300472B (en]) 1965-03-31 1965-03-31

Country Status (1)

Country Link
SE (1) SE300472B (en])

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130457A1 (de) * 1970-07-31 1972-02-03 Fairchild Camera Instr Co Halbleiterbauelement
US3946418A (en) * 1972-11-01 1976-03-23 General Electric Company Resistive gate field effect transistor
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
US4012762A (en) * 1974-06-24 1977-03-15 Sony Corporation Semiconductor field effect device having oxygen enriched polycrystalline silicon
US4014037A (en) * 1974-03-30 1977-03-22 Sony Corporation Semiconductor device
US4062033A (en) * 1975-04-25 1977-12-06 Sony Corporation Schottky barrier type semiconductor device
US4062707A (en) * 1975-02-15 1977-12-13 Sony Corporation Utilizing multiple polycrystalline silicon masks for diffusion and passivation
US4080619A (en) * 1975-04-30 1978-03-21 Sony Corporation Bipolar type semiconductor device
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
US4297149A (en) * 1980-05-05 1981-10-27 Rca Corporation Method of treating SiPOS passivated high voltage semiconductor device
US4322452A (en) * 1977-07-05 1982-03-30 Siemens Aktiengesellschaft Process for passivating semiconductor members
US4375125A (en) 1980-03-07 1983-03-01 U.S. Philips Corporation Method of passivating pn-junction in a semiconductor device
US4649414A (en) * 1981-09-14 1987-03-10 Oki Electric Industry Co., Ltd. PNPN semiconductor switches
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130457A1 (de) * 1970-07-31 1972-02-03 Fairchild Camera Instr Co Halbleiterbauelement
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
US3946418A (en) * 1972-11-01 1976-03-23 General Electric Company Resistive gate field effect transistor
US4014037A (en) * 1974-03-30 1977-03-22 Sony Corporation Semiconductor device
US4176372A (en) * 1974-03-30 1979-11-27 Sony Corporation Semiconductor device having oxygen doped polycrystalline passivation layer
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
US4012762A (en) * 1974-06-24 1977-03-15 Sony Corporation Semiconductor field effect device having oxygen enriched polycrystalline silicon
US4062707A (en) * 1975-02-15 1977-12-13 Sony Corporation Utilizing multiple polycrystalline silicon masks for diffusion and passivation
US4062033A (en) * 1975-04-25 1977-12-06 Sony Corporation Schottky barrier type semiconductor device
US4080619A (en) * 1975-04-30 1978-03-21 Sony Corporation Bipolar type semiconductor device
US4194934A (en) * 1977-05-23 1980-03-25 Varo Semiconductor, Inc. Method of passivating a semiconductor device utilizing dual polycrystalline layers
US4322452A (en) * 1977-07-05 1982-03-30 Siemens Aktiengesellschaft Process for passivating semiconductor members
US4375125A (en) 1980-03-07 1983-03-01 U.S. Philips Corporation Method of passivating pn-junction in a semiconductor device
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US4297149A (en) * 1980-05-05 1981-10-27 Rca Corporation Method of treating SiPOS passivated high voltage semiconductor device
US4757362A (en) * 1980-05-30 1988-07-12 Sharp Kabushiki Kaisha High voltage MOS transistor
US4766474A (en) * 1980-05-30 1988-08-23 Sharp Kabushiki Kiasha High voltage MOS transistor
US4649414A (en) * 1981-09-14 1987-03-10 Oki Electric Industry Co., Ltd. PNPN semiconductor switches

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